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STB200NF04 Datasheet(PDF) 2 Page - STMicroelectronics |
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STB200NF04 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 15 page STP200NF04 - STB200NF04 - STB200NF04-1 2/15 Table 3: Absolute Maximum ratings ( ) Pulse width limited by safe operating area (1) ISD ≤120A, di/dt ≤500A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting Tj = 25°C, Id = 60A, VDD=30 V (#) Current Limited by Package Table 4: Thermal Data ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 40 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 40 V VGS Gate- source Voltage ± 20 V ID (#) Drain Current (continuos) at TC = 25°C 120 A ID (#) Drain Current (continuos) at TC = 100°C 120 A IDM ( ) Drain Current (pulsed) 480 A PTOT Total Dissipation at TC = 25°C 310 W Derating Factor 2.07 W/°C dv/dt (1) Peak Diode Recovery voltage slope 1.5 V/ns EAS (2) Single Pulse Avalanche Energy 1.3 J Tj Tstg Operating Junction Temperature Storage Temperature -55 to 175 °C TO-220 / I2PAK / D2PAK Rthj-case Thermal Resistance Junction-case Max 0.48 °C/W Rthj-pcb Thermal Resistance Junction-pcb Max (see Figure 17) °C/W Rthj-amb Thermal Resistance Junction-ambient (Free air) Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 40 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 24 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 90 A 3.3 3.7 m Ω |
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