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STB200NF04 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STB200NF04
Description  N-CHANNEL 40V - 120 A - 3.3 mOHM TO-220/D2PAK/I2PAK STripFETII MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB200NF04 Datasheet(HTML) 2 Page - STMicroelectronics

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STP200NF04 - STB200NF04 - STB200NF04-1
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Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) ISD ≤120A, di/dt ≤500A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by Package
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
40
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
40
V
VGS
Gate- source Voltage
± 20
V
ID (#)
Drain Current (continuos) at TC = 25°C
120
A
ID (#)
Drain Current (continuos) at TC = 100°C
120
A
IDM ( )
Drain Current (pulsed)
480
A
PTOT
Total Dissipation at TC = 25°C
310
W
Derating Factor
2.07
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
1.5
V/ns
EAS (2)
Single Pulse Avalanche Energy
1.3
J
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 175
°C
TO-220 / I2PAK / D2PAK
Rthj-case
Thermal Resistance Junction-case Max
0.48
°C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max
(see Figure 17)
°C/W
Rthj-amb
Thermal Resistance Junction-ambient (Free air) Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
40
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
24
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 90 A
3.3
3.7
m
Ω


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