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TG2210FT Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TG2210FT Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TG2210FT 2002-07-30 1 TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2210FT RF SPDT Switch Switch the receive filter for mobile communication. Switch the diversity antenna. Switch the local signal. Features · Low insertion Loss: LOSS = 0.4dB (typ.) · High isolation: ISL = 30dB (typ.) · Low voltage operation: VC = 0 V/2.5 V · Small package: TU6 package (2.0 × 1.25 × 0.6 mm) Pin Connection, Marking (top view) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit VC1 5 V Control voltage VC2 5 V Input power Pi 1 W Operating temperature range Topr -40~85 °C Storage temperature range Tstg -55~125 °C Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. Weight: 0.008 g (typ.) U L 6 4 1 2 3 5 RF2 GND RF1 VC1 RFcom VC2 |
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Similar Description - TG2210FT |
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