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UNR9210J Datasheet(PDF) 3 Page - Panasonic Semiconductor |
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UNR9210J Datasheet(HTML) 3 Page - Panasonic Semiconductor |
3 / 19 page 3 Transistors with built-in Resistor UNR921xJ Series SJH00039BED ■ Electrical Characteristics (continued) T a = 25°C ± 3°C Characteristics charts of UNR9210J IC VCE VCE(sat) IC hFE IC Common characteristics chart PT Ta 0 0 160 40 120 80 150 125 100 75 50 25 Ambient temperature T a (°C) 012 210 48 6 0 60 50 40 30 20 10 Collector-emitter voltage V CE (V) Ta = 25°C IB = 1.0 mA 0.1 mA 0.3 mA 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.8 mA 0.9 mA 10 −2 10 −1 10 −1 1 10 102 110 102 IC / IB = 10 Ta = 75°C 25 °C −25°C Collector current I C (mA) 0 1 100 200 300 400 10 102 103 VCE = 10 V Ta = 75°C 25 °C −25°C Collector current I C (mA) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Parameter Symbol Conditions Min Typ Max Unit Emitter-base resistance UNR921CJ R2 −30% 47 +30% k Ω Rasistance UNR921MJ R1/R2 0.047 ratio UNR921NJ 0.1 UNR9218J/9219J 0.08 0.10 0.12 UNR9214J 0.17 0.21 0.25 UNR921TJ 0.47 UNR921FJ 0.37 0.47 0.57 UNR921AJ/921VJ 1.0 UNR9211J/9212J/9213J/921LJ 0.8 1.0 1.2 UNR921KJ 1.70 2.13 2.60 UNR921EJ 1.70 2.14 2.60 UNR921DJ 3.7 4.7 5.7 |
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