TS19751

Taiwan Semiconductor

3

Version: B1605

The Product is Covered by Patents and/or Pending Patent Applications

PARAMETER

SYMBOL

CONDITION

MIN

TYP

MAX

UNIT

MOSFET Section

Drain-Source Breakdown

Voltage

TS19751ACS

500

--

--

V

TS19751BCS

650

--

--

V

Drain-Source On-Resistance

TS19751ACS

--

--

30

Ω

TS19751BCS

--

--

17

Ω

Thermal Section

(Note 5, 6)

Thermal Shutdown

--

150

--

°C

Thermal Shutdown Release

--

120

--

°C

Note:

1.

Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for

stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational

sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may

remain possibility to affect device reliability.

2.

Devices are ESD sensitive. Handing precaution recommended.

3.

Thermal Resistance is specified with the component mounted on a low effective thermal conductivity test board in free air at

4.

The device is not guaranteed to function outside its operating conditions.

5.

Guaranteed by design.

6.

Auto Recovery Type.

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TS19751ACS RLG

SOP-8

2,500pcs / 13”Reel

TS19751BCS RLG

SOP-8

2,500pcs / 13”Reel