TSM2NB60CP

TSM2NB60CH

Taiwan Semiconductor

Document Number: DS_P0000070

1

Version: H1706

N-Channel Power MOSFET

600V, 2A, 4.4

Ω

FEATURES

● Advanced planar process

● 100% avalanche tested

● Pb-free plating

● Compliant to RoHS Directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

600

V

4.4

Ω

9.4

nC

APPLICATION

● Power Supply

● Lighting

TO-251(IPAK)

TO-252(DPAK)

Notes: MSL 3 (Moisture Sensitivity Level) for TO-252 (D-PAK) per J-STD-020

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Continuous Drain Current

(Note 1)

2

A

1.35

Pulsed Drain Current

(Note 2)

8

A

Single Pulsed Avalanche Energy

(Note 3)

55

mJ

Single Pulsed Avalanche Current

(Note 3)

2

A

Repetitive Avalanche Energy

(Note 2)

4.4

mJ

Peak Diode Recovery dv/dt

(Note 4)

dv/dt

4.5

V/ns

44

W

Operating Junction and Storage Temperature Range

- 55 to +150

°C