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SUM110N02-03P Datasheet(PDF) 4 Page - Vishay Siliconix |
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SUM110N02-03P Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 5 page SUM110N02-03P Vishay Siliconix New Product www.vishay.com 4 Document Number: 72096 S-22451—Rev. A, 20-Jan-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Drain Source Breakdown vs. Junction Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 100 10 1 0.3 0.6 0.9 1.2 VGS = 10 V ID = 30 A TJ = 25_C 0 20 22 24 26 28 30 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) TJ = 150_C ID = 10 mA |
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