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CY62168DV30L-55BVXI Datasheet(PDF) 3 Page - Cypress Semiconductor

Part # CY62168DV30L-55BVXI
Description  16-Mbit (2048K x 8) Static RAM
Download  9 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62168DV30L-55BVXI Datasheet(HTML) 3 Page - Cypress Semiconductor

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CY62168DV30
MoBL
Document #: 38-05329 Rev. *D
Page 3 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground
Potential ........................................ –0.3V to VCC(max) + 0.3V
DC Voltage Applied to Outputs
in High-Z State[4, 5]......................... –0.3V to VCC(max) + 0.3V
DC Input Voltage[4, 5] ......................–0.3V to VCC(max) + 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... > 200 mA
Operating Range
Range
Ambient
Temperature (TA) [6]
VCC[7]
Industrial
–40°C to +85°C
2.2V – 3.6V
DC Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
CY62168DV30-55
CY62168DV30-70
Unit
Min. Typ.[3]
Max.
Min. Typ.[3]
Max.
VOH
Output HIGH Voltage
2.2 < VCC < 2.7 IOH = −0.1 mA 2.0
2.0
V
2.7 < VCC < 3.6 IOH = −1.0 mA 2.4
2.4
VOL
Output LOW Voltage
2.2 < VCC < 2.7 IOL = 0.1 mA
0.4
0.4
V
2.7 < VCC < 3.6 IOH = 2.1 mA
0.4
0.4
VIH
Input HIGH Voltage
2.2 < VCC < 2.7
1.8
VCC +
0.3
1.8
VCC +
0.3
V
2.7 < VCC < 3.6
2.2
VCC +
0.3
2.2
VCC +
0.3
VIL
Input LOW Voltage
2.2 < VCC < 2.7
–0.3
0.6
–0.3
0.6
V
2.7 < VCC < 3.6
–0.3
0.8
–0.3
0.8
IIX
Input Leakage Current
GND < VI < VCC
–1
+1
–1
+1
µA
IOZ
Output Leakage Current GND < VO < VCC, Output disabled –1
+1
–1
+1
µA
ICC
VCC Operating Supply
Current
f = fMAX = 1/tRC Vcc = 3.6V,
IOUT = 0mA,
CMOS level
15
30
12
25
mA
f = 1 MHz
2
4
2
4
ISB1
Automatic CE
Power-down Current
CMOS Inputs
CE1 > VCC − 0.2V, CE2 <
0.2V, VIN > VCC − 0.2V, VIN
< 0.2V, f = fMAX (Address
and Data Only), f = 0 (OE,
WE, )
L2.5
30
2.5
30
µA
LL
2.5
22
2.5
22
ISB2
Automatic CE
Power-down Current
CMOS Inputs
CE1 > VCC − 0.2V, CE2 <
0.2V, VIN > VCC − 0.2V or
VIN < 0.2V, f = 0, VCC=3.6V
L2.5
30
2.5
30
µA
LL
2.5
22
2.5
22
Thermal Resistance
Parameter
Description
Test Conditions
BGA
Unit
ΘJA
Thermal Resistance[8]
(Junction to Ambient)
Still Air, soldered on a 3 x 4.5 inch, four-layer printed
circuit board
55
°C/W
ΘJC
Thermal Resistance[8]
(Junction to Case)
16
°C/W
Notes:
4.VIL(min) = –0.2V for pulse durations less than 20 ns.
5.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.
6.TA is the “Instant-On” case temperature.
7.Full device AC operation assumes a 100
µs ramp time from 0 to Vcc(min) and 100 µs wait time after Vcc stabilization..
8. Tested initially and after any design or process changes that may affect these parameters.


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