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BLF2022-90 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BLF2022-90 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 2003 Feb 24 6 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 handbook, halfpage 1.8 1.9 f (GHz) Zi ( Ω) 2.3 4 3 1 0 2 2 xi ri 2.1 2.2 MLD835 Fig.8 Input impedance as a function of frequency (series components); typical values. VDS = 28 V; ID = 750 mA; PL = 90 W; Th =25 °C. handbook, halfpage 1.8 1.9 f (GHz) ZL ( Ω) 2.3 4 2 −2 −4 0 2 RL XL 2.1 2.2 MLD836 Fig.9 Load impedance as a function of frequency (series components); typical values. VDS = 28 V; ID = 750 mA; PL = 90 W; Th =25 °C. handbook, full pagewidth MGS920 C7 C8 C3 L16 L14 L12 L20 L1 L3 L2 L4 L6 L8 L10 L11 L15 L17 L13 L5 L7 L9 L18 L19 C6 C9 C4 C10 input 50 Ω output 50 Ω C1 C2 C11 C12 R2 F1 C13 C14 VDD R1 C5 Vgate Fig.10 Class-AB test circuit at f = 2.2 GHz. |
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Similar Description - BLF2022-90 |
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