Absolute Maximum Ratings

Parameter

Units

ID @ VGS = -10V, TC = 25°C

Continuous Drain Current

-11

ID @ VGS = -10V, TC = 100°C Continuous Drain Current

-7.0

IDM

Pulsed Drain Current ➀

-44

PD @ TC = 25°C

Max. Power Dissipation

125

W

Linear Derating Factor

1.0

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

500

mJ

IAR

Avalanche Current ➀

-11

A

EAR

Repetitive Avalanche Energy ➀

12.5

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

-5.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 ( 0.063 in.(1.6mm) from case for 10s)

Weight

9.3 (typical)

g

PD - 90497F

A

11/18/02

www.irf.com

1

TO-254AA

Product Summary

IRFM9240

0.51

Ω -11A

For footnotes refer to the last page

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state resis-

tance combined with high transconductance.

sistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

Features:

POWER MOSFET

THRU-HOLE (TO-254AA)

IRFM9240

JANTX2N7237

JANTXV2N7237

JANS2N7237

REF:MIL-PRF-19500/595

200V, P-CHANNEL

HEXFET

®

MOSFETTECHNOLOGY