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K7I163682B-FC30 Datasheet(PDF) 11 Page - Samsung semiconductor |
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K7I163682B-FC30 Datasheet(HTML) 11 Page - Samsung semiconductor |
11 / 17 page 512Kx36 & 1Mx18 DDRII CIO b2 SRAM - 11 - Rev 3.1 July. 2004 K7I163682B K7I161882B AC TIMING CHARACTERISTICS(VDD=1.8V±0.1V, TA=0°C to +70°C) Notes: 1. All address inputs must meet the specified setup and hold times for all latching clock edges. 2. Control singles are R, W,BW0,BW1 and (NW0, NW1, for x8) and (BW2, BW3, also for x36) 3. If C,C are tied high, K,K become the references for C,C timing parameters. 4. To avoid bus contention, at a given voltage and temperature tCHQX1 is bigger than tCHQZ. The specs as shown do not imply bus contention beacuse tCHQX1 is a MIN parameter that is worst case at totally different test conditions (0 °C, 1.9V) than tCHQZ, which is a MAX parameter(worst case at 70°C, 1.7V) It is not possible for two SRAMs on the same board to be at such different voltage and temperature. 5. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. 6. Vdd slew rate must be less than 0.1V DC per 50 ns for DLL lock retention. DLL lock time begins once Vdd and input clock are stable. 7. Echo clock is very tightly controlled to data valid/data hold. By design, there is a ± 0.1 ns variation from echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations. PARAMETER SYMBOL -30 -25 -20 -16 UNIT NOTE MIN MAX MIN MAX MIN MAX MIN MAX Clock Clock Cycle Time (K, K, C, C)tKHKH 3.30 5.25 4.00 6.30 5.00 7.88 6.00 8.40 ns Clock Phase Jitter (K, K, C, C)tKC var 0.20 0.20 0.20 0.20 ns 5 Clock High Time (K, K, C, C)tKHKL 1.32 1.60 2.00 2.40 ns Clock Low Time (K, K, C, C)tKLKH 1.32 1.60 2.00 2.40 ns Clock to Clock (K ↑ → K↑, C↑ → C↑) tKHKH 1.49 1.80 2.20 2.70 ns Clock to data clock (K ↑ → C↑, K↑→ C↑) tKHCH 0.00 1.45 0.00 1.80 0.00 2.30 0.00 2.80 ns DLL Lock Time (K, C) tKC lock 1024 1024 1024 1024 cycle 6 K Static to DLL reset tKC reset 30 30 30 30 ns Output Times C, C High to Output Valid tCHQV 0.45 0.45 0.45 0.50 ns 3 C, C High to Output Hold tCHQX -0.45 -0.45 -0.45 -0.50 ns 3 C, C High to Echo Clock Valid tCHCQV 0.45 0.45 0.45 0.50 ns C, C High to Echo Clock Hold tCHCQX -0.45 -0.45 -0.45 -0.50 ns CQ, CQ High to Output Valid tCQHQV 0.27 0.30 0.35 0.40 ns 7 CQ, CQ High to Output Hold tCQHQX -0.27 -0.30 -0.35 -0.40 ns 7 C, High to Output High-Z tCHQZ 0.45 0.45 0.45 0.50 ns 3 C, High to Output Low-Z tCHQX1 -0.45 -0.45 -0.45 -0.50 ns 3 Setup Times Address valid to K rising edge tAVKH 0.40 0.50 0.60 0.70 ns Control inputs valid to K rising edge tIVKH 0.40 0.50 0.60 0.70 ns 2 Data-in valid to K, K rising edge tDVKH 0.30 0.35 0.40 0.50 ns Hold Times K rising edge to address hold tKHAX 0.40 0.50 0.60 0.70 ns K rising edge to control inputs hold tKHIX 0.40 0.50 0.60 0.70 ns K, K rising edge to data-in hold tKHDX 0.30 0.35 0.40 0.50 ns |
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