Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

IC62VV25616L-70B Datasheet(PDF) 6 Page - Integrated Circuit Solution Inc

Part # IC62VV25616L-70B
Description  256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IC62VV25616L-70B Datasheet(HTML) 6 Page - Integrated Circuit Solution Inc

Back Button IC62VV25616L-70B Datasheet HTML 2Page - Integrated Circuit Solution Inc IC62VV25616L-70B Datasheet HTML 3Page - Integrated Circuit Solution Inc IC62VV25616L-70B Datasheet HTML 4Page - Integrated Circuit Solution Inc IC62VV25616L-70B Datasheet HTML 5Page - Integrated Circuit Solution Inc IC62VV25616L-70B Datasheet HTML 6Page - Integrated Circuit Solution Inc IC62VV25616L-70B Datasheet HTML 7Page - Integrated Circuit Solution Inc IC62VV25616L-70B Datasheet HTML 8Page - Integrated Circuit Solution Inc IC62VV25616L-70B Datasheet HTML 9Page - Integrated Circuit Solution Inc IC62VV25616L-70B Datasheet HTML 10Page - Integrated Circuit Solution Inc Next Button
Zoom Inzoom in Zoom Outzoom out
 6 / 11 page
background image
6
Integrated Circuit Solution Inc.
LPSR019-0A 11/13/2001
IC62VV25616L
IC62VV25616LL
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-55
-70
-100
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tRC
Read Cycle Time
55
70
100
ns
tAA
Address Access Time
55
70
100
ns
tOHA
Output Hold Time
10
10
15
ns
tACE
CE Access Time
55
70
100
ns
tDOE
OE Access Time
30
35
50
ns
tHZOE(2)
OE to High-Z Output
20
25
30
ns
tLZOE(2)
OE to Low-Z Output
5
5
5
ns
tHZCE(2)
CE to High-Z Output
0
20
0
25
0
30
ns
tLZCE(2)
CE to Low-Z Output
10
10
10
ns
tBA
LB, UB Access Time
55
70
100
ns
tHZB
LB, UB o High-Z Output
0
25
0
25
0
35
ns
tLZB
LB. UB to Low-Z Output
0
0
0
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, input pulse levels of 0.4V to 1.4V and output
loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
IC62VV25616LL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-55
-70
-100
Symbol Parameter
TestConditions
Typ(2). Max.
Typ(2). Max.
Typ(2). Max.
Unit
ICC1
Vcc Dynamic Operating
VCC = 1.8V,
CE
≤ VIL
Com.
20
10
15
7
10
mA
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
20
10
15
7
10
ICC2
Vcc Dynamic Operating
VCC = 1.8V,
CE
≤ VIL
Com.
2
—2
—2
mA
Supply Current
IOUT = 0 mA, f = 1MHZ
Ind.
2—
2—
2
ISB2
CMOS Standby
VCC = Max., Other inputs= 0 - VCC
Com.
2
10
2
10
2
10
µA
Current (CMOS Inputs)
1) CE
≥ VCC – 0.2V (CE controlled)
Ind.
15
15
15
2)
LB/ UB
≥ VCC – 0.2V (LB/ UB controlled)
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vcc=1.8V, Ta=25
°C, and are not guaranteed or tested.


Similar Part No. - IC62VV25616L-70B

ManufacturerPart #DatasheetDescription
logo
Integrated Circuit Solu...
IC62VV1008L ICSI-IC62VV1008L Datasheet
212Kb / 11P
   1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
IC62VV1008L-100B ICSI-IC62VV1008L-100B Datasheet
212Kb / 11P
   1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
IC62VV1008L-100BI ICSI-IC62VV1008L-100BI Datasheet
212Kb / 11P
   1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
IC62VV1008L-70B ICSI-IC62VV1008L-70B Datasheet
212Kb / 11P
   1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
IC62VV1008L-70BI ICSI-IC62VV1008L-70BI Datasheet
212Kb / 11P
   1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
More results

Similar Description - IC62VV25616L-70B

ManufacturerPart #DatasheetDescription
logo
Integrated Circuit Solu...
IC62LV25616L ICSI-IC62LV25616L Datasheet
126Kb / 11P
   256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
logo
Samsung semiconductor
K6T4016C3B SAMSUNG-K6T4016C3B Datasheet
149Kb / 9P
   256Kx16 bit Low Power CMOS Static RAM
KM6164000B SAMSUNG-KM6164000B Datasheet
151Kb / 9P
   256Kx16 bit Low Power CMOS Static RAM
K6X4016T3F SAMSUNG-K6X4016T3F Datasheet
138Kb / 9P
   256Kx16 bit Low Power and Low Voltage CMOS Static RAM
K6X4016C3F SAMSUNG-K6X4016C3F Datasheet
131Kb / 9P
   256Kx16 bit Low Power full CMOS Static RAM
logo
Integrated Circuit Solu...
IC62VV12816L ICSI-IC62VV12816L Datasheet
255Kb / 11P
   128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM
logo
Samsung semiconductor
K6T4016V3C SAMSUNG-K6T4016V3C Datasheet
154Kb / 9P
   256Kx16 bit Low Power and Low Voltage CMOS Static RAM
logo
Integrated Circuit Solu...
IC62VV51216L ICSI-IC62VV51216L Datasheet
273Kb / 12P
   512K x 16 bit 1.8V and Ultra Low Power CMOS Static RAM
logo
Samsung semiconductor
K6F4016U6G SAMSUNG-K6F4016U6G Datasheet
180Kb / 9P
   256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
logo
Integrated Circuit Solu...
IC62VV5128L ICSI-IC62VV5128L Datasheet
166Kb / 11P
   512K x 8 bit 1.8V and Ultra Low Power CMOS Static RAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com