ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which

may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.

FEATURES

• High-speed access time: 15, 20, 25 ns

• Automatic power-down when chip is deselected

• CMOS low power operation

— 255 mW (max.) operating

— 0.18 mW (max.) CMOS standby

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh

required

• Three-state outputs

DESCRIPTION

The

32,768-word by 8-bit static RAM. It is fabricated using

high-performance CMOS technology. This highly reliable pro-

cess coupled with innovative circuit design techniques, yields

access times as fast as 15 ns maximum.

When

CE is HIGH (deselected), the device assumes a standby

mode at which the power dissipation is reduced to

50

µW (typical) with CMOS input levels.

Easy memory expansion is provided by using an active LOW

Chip Enable (

CE). The active LOW Write Enable (WE) controls

both writing and reading of the memory.

The IS62LV256L is available in the JEDEC standard 28-pin

SOJ and the 450-mil TSOP package.

IS62LV256L

32K x 8 LOW VOLTAGE

CMOS STATIC RAM

FUNCTIONAL BLOCK DIAGRAM

A0-A14

CE

OE

WE

256 X 1024

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VCC

I/O

DATA

CIRCUIT

I/O0-I/O7

APRIL 1999

Integrated Silicon Solution, Inc.

1

SR033-1A

04/27/99