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K9S1208V0M-SSB0 Datasheet(PDF) 9 Page - Samsung semiconductor

Part # K9S1208V0M-SSB0
Description  64M x 8 Bit SmartMedia Card
Download  33 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

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K9S1208V0M-SSB0
SmartMediaTM
9
AC Characteristics for Operation
NOTE :
1. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
tR
-
12
µs
ALE to RE Delay( ID read )
tAR1
10
-
ns
ALE to RE Delay(Read cycle)
tAR2
50
-
ns
Ready to RE Low
tRR
20
-
ns
RE Pulse Width
tRP
30
-
ns
WE High to Busy
tWB
-
100
ns
Read Cycle Time
tRC
50
-
ns
RE Access Time
tREA
-
35
ns
RE High to Output Hi-Z
tRHZ
15
30
ns
CE High to Output Hi-Z
tCHZ
-
20
ns
RE High Hold Time
tREH
15
-
ns
Output Hi-Z to RE Low
tIR
0
-
ns
Last RE High to Busy(at sequential read)
tRB
-
100
ns
CE High to Ready(in case of interception by CE at read)
tCRY
-
50 +tr(R/B)(1)
ns
CE High Hold Time(at the last serial read)(2)
tCEH
100
-
ns
CE Access Time
tCEA
-
45
ns
WE High to RE Low
tWHR
60
-
ns
Device Resetting Time(Read/Program/Erase)
tRST
-
5/10/500(3)
µs
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
Max
Unit
CLE setup Time
tCLS
0
-
ns
CLE Hold Time
tCLH
10
-
ns
CE setup Time
tCS
0
-
ns
CE Hold Time
tCH
10
-
ns
WE Pulse Width
tWP
25(1)
-
ns
ALE setup Time
tALS
0
-
ns
ALE Hold Time
tALH
10
-
ns
Data setup Time
tDS
20
-
ns
Data Hold Time
tDH
10
-
ns
Write Cycle Time
tWC
50
-
ns
WE High Hold Time
tWH
15
-
ns
NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.


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