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K9T1G08U0M Datasheet(PDF) 11 Page - Samsung semiconductor |
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K9T1G08U0M Datasheet(HTML) 11 Page - Samsung semiconductor |
11 / 38 page FLASH MEMORY 11 K9T1G08U0M Preliminary AC Characteristics for Operation NOTE : 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us. 2. To break the sequential read cycle, CE must be held high for longer time than tCEH. 3. The time to Ready depends on the value of the pull-up resistor tied R/B pin. Parameter Symbol Min Max Unit Data Transfer from Cell to Register tR -15 µs ALE to RE Delay tAR 10 - ns CLE to RE Delay tCLR 10 - ns Ready to RE Low tRR 20 - ns RE Pulse Width tRP 25 - ns WE High to Busy tWB - 100 ns Read Cycle Time tRC 50 - ns CE Access Time tCEA -45 ns RE Access Time tREA -30 ns RE High to Output Hi-Z tRHZ -30 ns CE High to Output Hi-Z tCHZ -20 ns RE or CE High to Output hold tOH 15 - ns RE High Hold Time tREH 15 - ns Output Hi-Z to RE Low tIR 0- ns WE High to RE Low tWHR 60 - ns Device Resetting Time(Read/Program/Erase) tRST - 5/10/500(1) µs Last RE High to Busy(at sequential read) tRB - 100 ns CE High to Ready(in case of interception by CE at read) tCRY - 50 + tr(R/B)(3) ns CE High Hold Time(at the last serial read)(2) tCEH 100 - ns AC Timing Characteristics for Command / Address / Data Input NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns. Parameter Symbol Min Max Unit CLE Set-up Time tCLS 0- ns CLE Hold Time tCLH 5- ns CE Setup Time tCS 0.- ns CE Hold Time tCH 5- ns WE Pulse Width tWP 25 (1) -ns ALE Setup Time tALS 0- ns ALE Hold Time tALH 5- ns Data Setup Time tDS 20 - ns Data Hold Time tDH 5- ns Write Cycle Time tWC 45 - ns WE High Hold Time tWH 15 - ns |
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