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K7N163631B-QC16 Datasheet(PDF) 11 Page - Samsung semiconductor |
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K7N163631B-QC16 Datasheet(HTML) 11 Page - Samsung semiconductor |
11 / 24 page 512Kx36 & 1Mx18 Pipelined NtRAMTM - 11 - Rev 0.4 Jan. 2005 K7N161831B K7N163631B Preliminary ASYNCHRONOUS TRUTH TABLE OPERATION ZZ OE I/O STATUS Sleep Mode H X High-Z Read LL DQ L H High-Z Write L X Din, High-Z Deselected L X High-Z Notes 1. X means "Don ′t Care". 2. Sleep Mode means power Sleep Mode of which stand-by current does not depend on cycle time. 3. Deselected means power Sleep Mode of which stand-by current depends on cycle time. ABSOLUTE MAXIMUM RATINGS* *Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. PARAMETER SYMBOL RATING UNIT Voltage on VDD Supply Relative to VSS VDD -0.3 to 4.6 V Voltage on Any Other Pin Relative to VSS VIN -0.3 to VDD+0.3 V Power Dissipation PD 1.6 W Storage Temperature TSTG -65 to 150 °C Operating Temperature Commercial TOPR 0 to 70 °C Industrial TOPR -40 to 85 °C Storage Temperature Range Under Bias TBIAS -10 to 85 °C CAPACITANCE*(TA=25 °C, f=1MHz) *Note : Sampled not 100% tested. PARAMETER SYMBOL TEST CONDITION MIN MAX UNIT Input Capacitance CIN VIN=0V - TBD pF Output Capacitance COUT VOUT=0V - TBD pF OPERATING CONDITIONS (0 °C ≤ TA ≤ 70°C) Notes: 1. The above parameters are also guaranteed at industrial temperature range. 2. It should be VDDQ ≤ VDD PARAMETER SYMBOL MIN Typ. MAX UNIT Supply Voltage VDD1 2.375 2.5 2.625 V VDDQ1 2.375 2.5 2.625 V VDD2 3.135 3.3 3.465 V VDDQ2 3.135 3.3 3.465 V Ground VSS 000 V VSS VIH VSS-1.0V 20% tCYC(MIN) |
Similar Part No. - K7N163631B-QC16 |
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Similar Description - K7N163631B-QC16 |
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