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CY7C199C-15VI Datasheet(PDF) 6 Page - Cypress Semiconductor

Part # CY7C199C-15VI
Description  32K x 8 Static RAM
Download  12 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C199C-15VI Datasheet(HTML) 6 Page - Cypress Semiconductor

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CY7C199C
Document #: 38-05408 Rev. *A
Page 6 of 12
AC Test Conditions
Thermal Resistance5
AC Electrical Characteristics6 7 8
Parameter
Description
Nom.
Unit
C1
Capacitor 1
30
pF
C2
Capacitor 2
5
R1
Resistor 1
480
R2
Resistor 2
255
R3
Resistor 3
480
R4
Resistor 4
255
RTH
Resistor Thevenin
167
VTH
Voltage Thevenin
1.73
V
Parameter
Description
Conditions
TSOP I
SOJ
DIP
Unit
Θ
JA
Thermal Resistance
(Junction to
Ambient)
Still Air, soldered on a
3 × 4.5 square inch,
two–layer printed
circuit board
88.6
79
TBD
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)
21.94
41.42
TBD
Notes:
5. Test Conditions assume a transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V.
Parameter
Description
12 ns
15 ns
20 ns
25 ns
Unit
Min
Max
Min
Max
Min
Max
Min
Max
tRC
Read Cycle Time
12
15
20
25
ns
tAA
Address to Data Valid
12
15
20
25
ns
tOHA
Data Hold from Address
Change
3
3
3
3
ns
tACE
CE to Data Valid
12
15
20
25
ns
tDOE
OE to Data Valid
5
7
9
9
ns
tLZOE
OE to Low Z
0
0
0
0
ns
tHZOE
OE to High Z
5
7
9
9
ns
tLZCE
CE to Low Z
3
3
3
3
ns
tHZCE
CE to High Z
5
7
9
9
ns
tPU
CE to Power–Up
0
0
0
0
ns
tPD
CE to Power–Down
12
15
20
20
ns
tWC
Write Cycle Time
12
15
20
25
ns
tSCE
CE to Write End
9
10
15
15
ns
tAW
Address Set–Up to Write
End
9
10
15
15
ns
tHA
Address Hold from Write
End
0
0
0
0
ns
6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
7. The internal write time of the memory is defined by the overlap of
CE LOW and WE LOW. CE and WE must be LOW to initiate a
write, and the transition of any of these signals can terminate the
write. The input data set–up and hold timing should be referenced
to the leading edge of the signal that terminates the write.
8. tHZOE, tHZCE, tHZWE are specified as in part (b) of the A/C Test
Loads. Transitions are measured ± 200 mV from steady state volt-
age.


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