Schottky Barrier Diodes (SBD)

1

Publication date: January 2002

SKH00074BED

EIAJ: SC-59

Mini3-G1 Package

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

30

V

Peak reverse voltage

Single

150

mA

110

Forward current (DC)

Single

30

mA

20

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Silicon epitaxial planar type

For switching

For wave detection

s Features

• Two MA3X704A (MA704A) is contained in one package

• Low forward voltage V

• Small temperature coefficient of forward characteristic

• Small reverse current I

R

• Mini type 3-pin package

s Absolute Maximum Ratings T

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

1

µA

Forward voltage (DC)

0.4

V

1.0

Terminal capacitance

1.5

pF

1.0

ns

Detection efficiency

η

65

%

s Electrical Characteristics T

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

Wave Form Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A

Marking Symbol

• MA3X704D: M2P • MA3X704E: M2R

Internal Connection

12

3

Note) *: Value per chip

12

3

D

E

MA3X704D MA3X704E

1 Cathode

Anode

2 Cathode

Anode

3 Anode

Cathode

Unit: mm

0.40

+0.10

–0.05

2

1

3

(0.95) (0.95)

1.9

±0.1

2.90

+0.20

–0.05

0.16

+0.10

–0.06

10˚

Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

 

2. Rated input/output frequency: 2 GHz

Note) The part number in the parenthesis shows conventional part number.