IDT71V67603S166BGG datasheet(4/23 Pages) IDT

Part #	IDT71V67603S166BGG

Description	256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

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Manufacturer	IDT [Integrated Device Technology]

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IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with

3.3V I/O, Pipelined Outputs, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

100 Pin TQFP Capacitance

(TA = +25°C, f = 1.0MHz)

Recommended Operating

Temperature and Supply Voltage

Absolute Maximum Ratings(1)

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2. VDD terminals only.

3. VDDQ terminals only.

4. Input terminals only.

5. I/O terminals only.

6. This is a steady-state DC parameter that applies after the power supplies have

ramped up. Power supply sequencing is not necessary; however, the voltage

on any input or I/O pin cannot exceed VDDQ during power supply ramp up.

7. TA is the "instant on" case temperature.

Recommended DC Operating

Conditions

NOTE:

1. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.

NOTE:

1. This parameter is guaranteed by device characterization, but not production tested.

Symbol

Rating

Commercial

Unit

VTERM

(2)

Terminal Voltage with

Respect to GND

-0.5 to +4.6

V

VTERM

(3,6)

Terminal Voltage with

Respect to GND

-0.5 to VDD

V

VTERM

(4,6)

Terminal Voltage with

Respect to GND

-0.5 to VDD +0.5

V

VTERM

(5,6)

Terminal Voltage with

Respect to GND

-0.5 to VDDQ +0.5

V

TA(7)

Operating Temperature

-0 to +70

oC

TBIAS

Temperature

Under Bias

-55 to +125

oC

TSTG

Storage

Temperature

-55 to +125

oC

PT

Power Dissipation

2.0

W

IOUT

DC Output Current

50

mA

5310 tbl 03

Grade

Temperature(1)

VSS

VDD

VDDQ

Commercial

0°C to +70°C

0V

3.3V±5%

Industrial

-40°C to +85°C

0V

3.3V±5%

5310 tbl 04

Symbol

Parameter

Min.

Typ.

Max.

Unit

VDD

Core Supply Voltage

3.135

3.3

3.465

V

VDDQ

I/O Supply Voltage

3.135

3.3

3.465

V

VSS

Supply Voltage

0

V

VIH

Input High Voltage - Inputs

2.0

____

VDD +0.3

V

VIH

Input High Voltage - I/O

2.0

____

VDDQ +0.3

V

VIL

Input Low Voltage

-0.3

(1)

____

0.8

V

5310 tbl 05

Symbol

Parameter

(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

5

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

5310 tbl 07

119 BGA Capacitance

(TA = +25°C, f = 1.0MHz)

Symbol

Parameter

(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

7

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

5310 tbl 07a

NOTE:

1. TA is the "instant on" case temperature.

Symbol

Parameter

(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

7

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

5310 tbl 07b

165 fBGA Capacitance

(TA = +25°C, f = 1.0MHz)

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