NTE2565 datasheet(2/2 Pages) NTE

Part #	NTE2565

Description	Complementary Silicon Transistors High Current Switch

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Manufacturer	NTE [NTE Electronics]

Direct Link	http://www.nteinc.com

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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector Base Breakdown Voltage

V(BR)CBO IC = 1mA, IE = 0

60

–

V

Collector Emitter Breakdown Voltage

V(BR)CEO IC = 1mA, RBE = ∞

30

–

V

Emitter Base Breakdown Voltage

V(BR)EBO IE = 1mA, IC = 0

6

–

V

Turn–On Time

ton

VCC = 10V, VBE = –5V,

–

0.1

–

µs

Storage Time

NTE2564

tstg

20IB1 = –20IB2 = IC = 4A,

Pulse Width = 20

µs,

Duty Cycle

≤ 1%, Note 1

–

0.5

–

µs

NTE2565

Duty Cycle

≤ 1%, Note 1

–

0.2

–

µs

Fall Time

tf

–

1.6

–

µs

Note 1. For NTE2565, the polarity is reversed.

.100 (2.54)

.019 (0.5)

.177 (4.5)

.051 (1.3)

.346

(8.8)

.433

(11.0)

.035

(0.9)

.402 (10.2)

BC

E

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