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KTD1854T Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD1854T
Description  EPITAXIAL PLANAR NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2001. 10. 23
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD1854T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
DRIVER APPLICATIONS.
FEATURES
AF amplifier, solenoid drivers, LED drivers.
Darlington connection.
High DC current gain.
Very small-sized package permitting sets to be made
smaller and slimer.
Complementary to KTB1234T.
MAXIMUM RATINGS (Ta=25 )
DIM MILLIMETERS
A
B
D
E
TSM
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K0.60
L0.55
K
B
E
H
J
J
2
1
3
+_
+_
+_
+_
+_
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=60V, IE=0
-
-
100
nA
Emitter Cut-off Current
IEBO
VEB=8V, IC=0
-
-
100
nA
Collector-Base Breakdown Voltage
V(BR)CBO
IC=10 A, IE=0
80
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, IB=0
50
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IC=10 A, IC=0
10
V
DC Current Gain
hFE 1
VCE=2V, IC=10mA
5000
-
-
hFE 2
VCE=2V, IC=100mA
4000
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=100mA, IB=100 A
-
0.9
1.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=100mA, IB=100 A
-
1.5
2.0
V
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
DC
IC
200
mA
Pulse
ICP
400
Collector Power Dissipation
PC *
0.9
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
Type Name
Marking
Lot No.
L Y
COLLECTOR
BASE
EMITTER
EQUIVALENT CIRCUIT
* Package mounted on a ceramic board (600
0.8 )




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