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BUK9507-30B Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK9507-30B Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 15 page Philips Semiconductors BUK95/9607-30B TrenchMOS™ logic level FET Product data Rev. 01 — 25 April 2003 7 of 15 9397 750 11239 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Tj =25 °C; tp = 300 µsTj =25 °C; ID =25A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. Tj =25 °C; tp = 300 µs Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03nn16 0 100 200 300 02 46 8 10 VDS (V) ID (A) Label is VGS (V) 10 6 5 4.8 4.6 4.4 4.2 4 3.8 3.6 3.4 3.2 3 2.8 2.6 03nn15 0 5 10 15 20 0 5 10 15 VGS (V) RDSon (m Ω) 03nn17 0 5 10 15 20 0 40 80 120 160 ID (A) RDSon (m Ω) Label is VGS (V) 3.2 3.4 3.6 3.8 4 5 10 03aa27 0 0.5 1 1.5 2 -60 0 60 120 180 Tj (°C) a a R DSon R DSon 25 C ° () ----------------------------- = |
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