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IXFX50N50 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFX50N50 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 4 page © 2002 IXYS All rights reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150°C 500 V V DGR T J = 25 °C to 150°C; R GS = 1 MΩ 500 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T C = 25 °C 50N50 50 A 55N50 55 A I DM T C = 25 °C, pulse width limited by T JM 50N50 200 A 55N50 220 A I AR T C = 25 °C 50N50 50 A 55N50 55 A E AR T C = 25 °C60 mJ E AS T C = 25 °C3 J dv/dt I S ≤ I DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns T J ≤ 150°C, RG = 2 Ω P D T C = 25 °C 520 W T J -55 ... +150 ° C T JM 150 °C T stg -55 ... +150 ° C T L 1.6 mm (0.063 in.) from case for 10 s 300 °C M d Mounting torque 1.13/10 Nm/lb.in. Weight 6 g Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 1mA 500 V V GS(th) V DS = VGS, ID = 8mA 2.5 4.5 V I GSS V GS = ±20 V, VDS = 0 ±200 nA I DSS V DS = V DSS T J = 25 °C25 µA V GS = 0 V T J = 125 °C2 mA R DS(on) V GS = 10 V, I D = 0.5 I D25 50N50 100 m Ω Note 1 55N50 80 m Ω Single Die MOSFET Features l International standard package l Low R DS (on) HDMOS TM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages l PLUS 247TM package for clip or spring mounting l Space savings l High power density V DSS I D25 R DS(on) IXFX 50N50 500 V 50 A 100 m Ω Ω Ω Ω Ω IXFX 55N50 500 V 55 A 80 m Ω Ω Ω Ω Ω t rr ≤ ≤≤≤≤ 250 ns HiPerFETTM Power MOSFETs 98507D (04/02) PLUS 247TM (IXFX) G D D (TAB) Preliminary data sheet |
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