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K4S511533F-YC Datasheet(PDF) 10 Page - Samsung semiconductor |
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K4S511533F-YC Datasheet(HTML) 10 Page - Samsung semiconductor |
10 / 12 page K4S511533F - Y(P)C/L/F September 2004 10 Mobile SDRAM Register Programmed with Extended MRS Address BA1 BA0 A12 ~ A10/AP A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Function Mode Select RFU*1 DS RFU*1 PASR Normal MRS Mode Test Mode CAS Latency Burst Type Burst Length A8 A7 Type A6 A5 A4 Latency A3 Type A2 A1 A0 BT=0 BT=1 0 0 Mode Register Set 0 0 0 Reserved 0 Sequential 0 0 0 1 1 0 1 Reserved 0 0 1 1 1 Interleave 0 0 1 2 2 1 0 Reserved 0 1 0 2 Mode Select 0 1 0 4 4 1 1 Reserved 0 1 1 3 BA1 BA0 Mode 0 1 1 8 8 Write Burst Length 1 0 0 Reserved 0 0 Setting for Nor- mal MRS 1 0 0 Reserved Reserved A9 Length 1 0 1 Reserved 1 0 1 Reserved Reserved 0 Burst 1 1 0 Reserved 1 1 0 Reserved Reserved 1 Single Bit 1 1 1 Reserved 1 1 1 Full Page*3 Reserved Register Programmed with Normal MRS Address BA0 ~ BA1 A12 ~ A10/AP A9*2 A8 A7 A6 A5 A4 A3 A2 A1 A0 Function "0" Setting for Normal MRS RFU*1 W.B.L Test Mode CAS Latency BT Burst Length A. MODE REGISTER FIELD TABLE TO PROGRAM MODES NOTES: 1. RFU(Reserved for future use) should stay "0" during MRS cycle. 2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled. 3. Full Page Length x16 : 64Mb(256), 128Mb(512),256Mb(512),512Mb(1024) Mode Select Driver Strength PASR BA1 BA0 Mode A6 A5 Driver Strength A2 A1 A0 Size of Refreshed Array 0 0 Normal MRS 0 0 Full 0 0 0 Full Array 0 1 Reserved 0 1 1/2 0 0 1 1/2 of Full Array 1 0 EMRS for Mobile SDRAM 1 0 Reserved 0 1 0 1/4 of Full Array 1 1 Reserved 1 1 Reserved 0 1 1 Reserved Reserved Address 1 0 0 Reserved A12~A10/AP A9 A8 A7 A4 A3 1 0 1 Reserved 0 0 0 0 0 0 1 1 0 Reserved 1 1 1 Reserved EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength) |
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