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SI91842DT-36-T1 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI91842DT-36-T1 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Si91842/4 Vishay Siliconix New Product Document Number: 71732 S-20478—Rev. C, 01-Apr-02 www.vishay.com 3 SPECIFICATIONS Limits –40 to 85 _C Tempa Test Conditions Unless Specified TA = 25_C, VIN = VOUT(nom) + 1 V, IOUT = 1 mA, CIN = 1 mF, COUT = 1.0 mF, VSD = 1.5 V Parameter Unit Maxb Typc Minb Tempa Test Conditions Unless Specified TA = 25_C, VIN = VOUT(nom) + 1 V, IOUT = 1 mA, CIN = 1 mF, COUT = 1.0 mF, VSD = 1.5 V Symbol f = 1 kHz Room 60 Ripple Rejection DVOUT/DVIN IOUT = 150 mA f = 10 kHz Room 40 dB OUT IN OUT f = 100 kHz Room 30 Dynamic Line Regulation DVO(line) VIN : VOUT(nom) + 1 V to VOUT(nom) + 2 V tr/tf = 2 ms, IOUT = 150 mA Room 20 mV Dynamic Load Regulation DVO(load) IOUT : 1 mA to 150 mA, tr/tf = 2 ms Room 25 mV Thermal Shutdown Junction Temperature TJ(S/D) Room 150 _C Thermal Hysteresis THYST Room 20 C Reverse current IR VIN = –6.0 V Room 1 mA Short Circuit Current ISC VOUT = 0 V Room 700 mA Shutdown Shutdown Supply Current ICC(off) VSD = 0 V Room 0.1 1 mA High = Regulator ON (Rising) Full 1.5 VIN SD Pin Input Voltage VSD Low = Regulator OFF (Falling) Full 0.4 V Auto Discharge Resistance R_DIS Si91842 Only Room 100 W SD Pin Input Currentf IIN(SD) VSD = 1.5 V, VIN = 6 V Room 0.7 mA SD Hysteresis VHYST(SD) Full 150 mV VOUT Turn-On Time tON VSD (See Figure 1), ILOAD = 100 mA Room 50 mS ERROR Output ERROR High Leakage IOFF ERROR v VIN. VOUT in Regulation Full 1 mA ERROR Low Voltage VOL ISINK = 0.5 mA Full 0.4 V ERROR Voltage Threshold VERROR VOUT Below VOUT(nom)g, VIN w 2 V VOUT Falling, IOUT = 1 mA, VOUT(nom) w 2 V Full –2 –4 –6 ERROR Voltage Threshold VERROR VOUT(nom)g t 2 V, VIN u 2 V Full –4 % ERROR Voltage Threshold Hysteresis VHYST(ERROR) Room 1.5 % Notes a. Room = 25 _C, Full = –40 to 85_C. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Dropout voltage is defined as the input to output differential voltage at which the output voltage drops 2% below the output voltage measured with a 1-V differential, provided that VIN does not not drop below 2.0 V. e. Ground current is specified for normal operation as well as “drop-out” operation. f. The device’s shutdown pin includes a typical 2-M W internal pull-down resistor connected to ground. g. VOUT(nom) is VOUT when measured with a 1-V differential to VIN. TIMING WAVEFORMS FIGURE 1. Timing Diagram for Power-Up VSD 0.95 VNOM VOUT VNOM tON 0 V VIN tr v 1 mS |
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