TB1262F datasheet(5/66 Pages) TOSHIBA

Part #	TB1262F

Description	TOSHIBA BiCMOS INTEGRATED CIRCUIT, SILICON MONOLITHIC

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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5 / 66 page

TB1261F/TB1262F

2002-6-30 5 / 66

4, MAXIMUM RATINGS

(Ta=25℃)

ITEM

SYMBOL

RATING

UNIT

Supply Voltage (9V Vcc)

Vcc max9

12

Ｖ

Supply Voltage (5V Vcc)

Vcc max5

6.5

Ｖ

Supply Voltage (3.3V Vdd)

Vdd max3.3

5.0

Ｖ

Power Dissipation

PD max

1980(*1)

mW

Input terminal Voltage

V in

GND – 0.3 ~

Vcc + 0.3

V

Operating Temperature

Topr

-20

~

65

℃

Storage Temperature

Tstg

-55

~ 150

℃

(*1) When using this device at above Ta=25℃, the power dissipation decreases by 15.9mV per 1℃ rise.

(*2) This IC is weak against static electricity and surge impulse. Please take counter measure to meet, if

necessary.

(*3) This IC is not proofed enough against a strong E-M field by CRT which mau cause function error

and/or poor characteristics. Keeping the distance from CRT to the IC longer than 20cm, or if cannot,

placing shield metal over the IC, is recommended in an application.

Ta-PD Curve

( on a PCB)

5, OPERATING POWER SUPPLY VOLTAGE

PIN NO.

PIN NAME

MIN.

TYP.

MAX.

U

UNIT

NIT

NOTE

74

IF Vcc (5V)

4.75

5

5.25

V

－

67

IF Vcc (9V)

8.55

9

9.45

25

RGB VCC (9V)

8.55

9

9.45

V

－

45

H VCC (9V)

8.55

9

9.45

V

－

35

DIGITAL VDD

3.1

3.3

3.5

V

This pin should be supplied from

HVcc via 270 ohms of resister.

11

Y/C VCC (5V)

4.75

5

5.25

V

Atmosphere Temperature

Ta　(

°ｃ)

1980

1349

150

65

0

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