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SLG46127 Datasheet(PDF) 12 Page - Dialog Semiconductor |
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SLG46127 Datasheet(HTML) 12 Page - Dialog Semiconductor |
12 / 88 page 000-0046127-101 Page 11 of 87 SLG46127 5.9 Typical Deglitch Filter Pulse Width Performance 5.10 Power Switch Electrical Characteristics (each P-FET) Table 5. Typical Deglitch Filter Pulse Width Performance at T = 25°C. Parameter VDD = 1.8 V VDD = 3.3V VDD = 5.0V Unit Filtered Pulse Width < 150 < 55 < 35 ns Table 6. Power Switch Electrical Characteristics, TA = -40°C to +85°C (with typical values at TA = +25°C), VDD = 5.5 V, unless otherwise specified Parameter Description Conditions Min. Typ. Max. Unit RDS(ON) Static Drain-to-Source On-Resis- tance TA = +25°C, VGS = -5.5 V, ID = -100 mA (see Note 1) -- 44 50 mΩ TA = +25°C, VGS = -3.3 V, ID = -100 mA (see Note 1) -- 58 65 TA = +25°C, VGS = -1.71 V, ID = -100 mA (see Note 1) -- 110 119 TA = +85°C, VGS = -5.5 V, ID = -100 mA (see Note 1) -- 51 58 TA = +85°C, VGS = -3.3 V, ID = -100 mA (see Note 1) -- 69 77 TA = +85°C, VGS = -1.71 V, ID = -100 mA (see Note 1) -- 129 138 VGS(th) Gate Threshold Voltage VDS = VGS, ID = -1 mA -0.48 -0.61 -0.72 V IDSS Zero Gate Voltage Drain Current TA = +25°C, VDS = -5.5 V, VGS = 0 V (see Note 2) -- -- 0.4 µA TA = +85°C, VDS = -5.5 V, VGS = 0 V -- -- 3.4 IGSS Gate-Body Leakage TA = +25°C, VGS = ±5.5 V (see Note 2) -- ±5 ±100 nA TA = +85°C, VGS = ±5.5 V -- ±400 ±2000 Gm Forward Transconductance VDS = -5.5 V, VGS = -1.8 V, ID = -2 A (see Note 1) 4.5 5.4 -- S Dynamic RG Internal Gate Resistance -- 200 -- Ω Ciss Input Capacitance TA = +25°C VDS = -5.5 V VGS = 0 V ƒ = 1.0 MHz (see Note 3) -- 207 -- pF Coss Output Capacitance -- 122 -- Crss Reverse Transfer Capacitance -- 57 -- Qg Total Gate Charge TA = +25°C VDS = -5.5 V VGS = -5.5 V ID = -2 A (see Note 1) -- 1.45 1.55 nC Qgs Gate-to-Source Charge -- 0.24 -- Qgd Gate-to-Drain Charge -- 0.24 -- ton Turn-On Time TA = +25°C, VDS = -5.5 V, VGS = 0 to -5.5 V, ID = -1 A, Internal Drive -- 63 -- ns toff Turn-Off Delay Time TA = +25°C, VDS = -5.5 V, VGS = 0 to -5.5 V, ID = -1 A, Internal Drive -- 287 -- ns Drain-Source Body Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current TA = +25°C, single channel opera- tion -- -- -2 A VDSF Diode Forward Voltage VGS = 0 V, IS = 100 mA (see Note 1) 0.63 0.75 0.87 V Note 1: Pulse test: ƒ = 100 Hz, Duty cycle < 2%. Note 2: Measured to be less than 0.4 μA during production test. Note 3: RG influence has been excluded. |
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