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SLG46127 Datasheet(PDF) 12 Page - Dialog Semiconductor

Part # SLG46127
Description  GreenPAK Programmable Mixed-signal Matrix
Download  88 Pages
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Manufacturer  DIALOG [Dialog Semiconductor]
Direct Link  http://www.dialog-semiconductor.com/
Logo DIALOG - Dialog Semiconductor

SLG46127 Datasheet(HTML) 12 Page - Dialog Semiconductor

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000-0046127-101
Page 11 of 87
SLG46127
5.9 Typical Deglitch Filter Pulse Width Performance
5.10 Power Switch Electrical Characteristics (each P-FET)
Table 5. Typical Deglitch Filter Pulse Width Performance at T = 25°C.
Parameter
VDD = 1.8 V VDD = 3.3V VDD = 5.0V
Unit
Filtered Pulse Width
< 150
< 55
< 35
ns
Table 6. Power Switch Electrical Characteristics, TA = -40°C to +85°C (with typical values at TA = +25°C), VDD = 5.5 V,
unless otherwise specified
Parameter Description
Conditions
Min.
Typ.
Max.
Unit
RDS(ON)
Static Drain-to-Source On-Resis-
tance
TA = +25°C, VGS = -5.5 V, ID = -100
mA (see Note 1)
--
44
50
TA = +25°C, VGS = -3.3 V, ID = -100
mA (see Note 1)
--
58
65
TA = +25°C, VGS = -1.71 V, ID = -100
mA (see Note 1)
--
110
119
TA = +85°C, VGS = -5.5 V, ID = -100
mA (see Note 1)
--
51
58
TA = +85°C, VGS = -3.3 V, ID = -100
mA (see Note 1)
--
69
77
TA = +85°C, VGS = -1.71 V, ID = -100
mA (see Note 1)
--
129
138
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -1 mA
-0.48
-0.61
-0.72
V
IDSS
Zero Gate Voltage Drain Current
TA = +25°C, VDS = -5.5 V, VGS = 0 V
(see Note 2)
--
--
0.4
µA
TA = +85°C, VDS = -5.5 V, VGS = 0 V
--
--
3.4
IGSS
Gate-Body Leakage
TA = +25°C, VGS = ±5.5 V (see
Note 2)
--
±5
±100
nA
TA = +85°C, VGS = ±5.5 V
--
±400
±2000
Gm
Forward Transconductance
VDS = -5.5 V, VGS = -1.8 V, ID = -2 A
(see Note 1)
4.5
5.4
--
S
Dynamic
RG
Internal Gate Resistance
--
200
--
Ω
Ciss
Input Capacitance
TA = +25°C
VDS = -5.5 V
VGS = 0 V
ƒ = 1.0 MHz (see Note 3)
--
207
--
pF
Coss
Output Capacitance
--
122
--
Crss
Reverse Transfer Capacitance
--
57
--
Qg
Total Gate Charge
TA = +25°C
VDS = -5.5 V
VGS = -5.5 V
ID = -2 A (see Note 1)
--
1.45
1.55
nC
Qgs
Gate-to-Source Charge
--
0.24
--
Qgd
Gate-to-Drain Charge
--
0.24
--
ton
Turn-On Time
TA = +25°C, VDS = -5.5 V, VGS = 0
to -5.5 V, ID = -1 A, Internal Drive
--
63
--
ns
toff
Turn-Off Delay Time
TA = +25°C, VDS = -5.5 V, VGS = 0
to -5.5 V, ID = -1 A, Internal Drive
--
287
--
ns
Drain-Source Body Diode Characteristics
IS
Maximum Continuous Drain-Source
Diode Forward Current
TA = +25°C, single channel opera-
tion
--
--
-2
A
VDSF
Diode Forward Voltage
VGS = 0 V, IS = 100 mA (see Note 1)
0.63
0.75
0.87
V
Note 1: Pulse test: ƒ = 100 Hz, Duty cycle < 2%.
Note 2: Measured to be less than 0.4 μA during production test.
Note 3: RG influence has been excluded.


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