UG12JT, UGF12JT, UGB12JT Series

Vishay Semiconductors

formerly General Semiconductor

www.vishay.com

Document Number 88758

2

30-Jul-02

Parameter

Symbol

UG12HT

UG12JT

Unit

Maximum repetitive peak reverse voltage

500

600

V

Maximum working reverse voltage

400

480

V

Maximum RMS voltage

350

420

V

Maximum DC blocking voltage

500

600

V

Maximum average forward rectified current

12

A

Peak forward surge current 8.3ms single half sine-wave

135

A

superimposed on rated load (JEDEC Method)

Operating junction and storage temperature range

–55 to +150

°C

RMS Isolation voltage (UGF types only)

from terminals to heatsink with t = 1.0 second, RH

≤ 30%

V

Parameter

Symbol

UG12HT

UG12JT

Unit

Maximum instantaneous

1.75

V

1.50

30

µA

800

µA

4.0

mA

Maximum reverse recovery time at

30

ns

Maximum reverse recovery time at

50

ns

S

0.9

—

Maximum reverse recovery current at

7.5

A

Peak forward recovery time at

500

ns

Parameter

Symbol

UG12

UGF12

UGB12

Unit

Typical thermal resistance from junction to case

R

θJC

1.73

3.04

1.73

°C/W

Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset

(2) Clip mounting (on case), where leads do overlap heatsink

(3) Screw mounting with 4-40 screw, where washer diameter is

≤ 4.9 mm (0.19”)

(4) Pulse test: 300

µs pulse width, 1% duty cycle

Ordering Information

Product

Case

Package Code

Package Option

UG12HT & UG12JT

TO-220AC

45

Anti-Static tube, 50/tube, 2K/carton

UGF12HT & UGF12JT

ITO-220AC

45

Anti-Static tube, 50/tube, 2K/carton

31

13” reel, 800/reel, 4.8K/carton

UGB12HT & UGB12JT

TO-263AB

45

Anti-Static tube, 50/tube, 2K/carton

81

Anti-Static 13” reel, 800/reel, 4.8K/carton