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UNR1214 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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UNR1214 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
2 / 14 page 2 UNR121x Series SJH00003BED ■ Electrical Characteristics T a = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 050 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 050 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, I E = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base UNR1211 IEBO VEB = 6 V, IC = 0 0.5 mA cutoff current UNR1212/1214/121D/121E 0.2 (Collector open) UNR1213 0.1 UNR1210/1215/1216/1217 0.01 UNR121F/121K 1.0 UNR1219 1.5 UNR1218/121L 2.0 Forward current UNR1211 hFE VCE = 10 V, I C = 5 mA 35 transfer ratio UNR1212/121E 60 UNR1213/1214 80 UNR1210 */1215 */1216 */ 160 460 1217 * UNR1219/121D/121F 30 UNR1218/121K/121L 20 Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.3 mA 0.25 V Output voltage high-level VOH VCC = 5 V, V B = 0.5 V, R L = 1 kΩ 4.9 V Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 0.2 V UNR1213/121K VCC = 5 V, VB = 3.5 V, RL = 1 kΩ UNR121D VCC = 5 V, V B = 10 V, R L = 1 kΩ UNR121E VCC = 5 V, VB = 6 V, RL = 1 kΩ Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 80 MHz Input resistance UNR1211/1214/1215/121K R1 −30% 10 +30% k Ω UNR1212/1217 22 UNR1210/1213/121D/121E 47 UNR1216/121F/121L 4.7 UNR1218 0.51 UNR1219 1 Resistance ratio UNR1211/1212/1213/121L R1/R2 0.8 1.0 1.2 UNR1214 0.17 0.21 0.25 UNR1218/1219 0.08 0.1 0.12 UNR121D 4.7 UNR121E 2.14 UNR121F 0.47 UNR121K 2.13 Rank Q R S hFE 160 to 260 210 to 340 290 to 460 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification (UNR1110/1115/1116/1117) |
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