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UN511D Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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UN511D Datasheet(HTML) 2 Page - Panasonic Semiconductor |
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2 / 17 page  2 UNR511x Series SJH00022BED ■ Electrical Characteristics T a = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, I E = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base UNR5110/5115/5116/5117 IEBO VEB = −6 V, IC = 0 − 0.01 mA cutoff current UNR5113 − 0.1 (Collector open) UNR5112/5114/511D/ − 0.2 511E/511M/511N/511T UNR511Z − 0.4 UNR5111 − 0.5 UNR511F/511H −1.0 UNR5119 −1.5 UNR5118/511L/511V −2.0 Forward current UNR511V hFE VCE = −10 V, I C = −5 mA 6 20 transfer ratio UNR5118/511L 20 UNR5119/511D/511F/511H 30 UNR5111 35 UNR5112/511E 60 UNR511Z 60 200 UNR5113/5114/511M 80 UNR511N/511T 80 400 UNR5110*/5115*/5116*/5117* 160 460 Collector-emitter saturation voltage VCE(sat) IC = −10 mA, I B = − 0.3 mA − 0.25 V UNR511V IC = −10 mA, IB = −1.5 mA Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ−4.9 V Output voltage low-level VOL VCC = −5 V, V B = −2.5 V, R L = 1 kΩ− 0.2 V UNR5113 VCC = −5 V, VB = −3.5 V, RL = 1 kΩ UNR511D VCC = −5 V, VB = −10 V, RL = 1 kΩ UNR511E VCC = −5 V, V B = −6 V, R L = 1 kΩ Transition frequency fT VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz UNR5116 VCB = −10 V, IE = 2 mA, f = 200 MHz 150 Input UNR5118 R1 −30% 0.51 +30% k Ω resistance UNR5119 1.0 UNR511H/511M/511V 2.2 UNR5116/511F/511L 4.7 511N/511Z UNR5111/5114/5115 10 UNR5112/5117/511T 22 UNR5110/5113/511D/511E 47 Resistance UNR511M R1/R2 0.047 ratio UNR511N 0.1 UNR5118/5119 0.08 0.10 0.12 UNR511Z 0.21 |
Similar Part No. - UN511D |
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Similar Description - UN511D |
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