Philips Semiconductors

PSMN004-36P/36B

N-channel enhancement mode field-effect transistor

Product data

Rev. 01 — 19 November 2001

4 of 13

9397 750 08621

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

7.

Thermal characteristics

7.1 Transient thermal impedance

Table 4:

Thermal characteristics

Symbol Parameter

Conditions

Value

Unit

thermal resistance from junction to mounting

base

Figure 4

0.65

K/W

thermal resistance from junction to ambient

vertical in still air; SOT78 package

60

K/W

mounted on a printed circuit board;

minimum footprint; SOT404 package

50

K/W

Fig 4.

Transient thermal impedance from junction to mounting base as a function of pulse duration.

03ag43

10-3

10-2

10-1

1

10-6

10-5

10-4

10-3

10-2

10-1

1

tp (s)

Zth j-mb

(K/W)

single pulse

δ = 0.5

0.2

0.1

0.05

0.02

tp

tp

T

P

t

T