PSMN006-20K datasheet(5/12 Pages) PHILIPS

Part #	PSMN006-20K

Description	TrenchMOS ultra low level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PSMN006-20K

TrenchMOS™ ultra low level FET

Product data

Rev. 01 — 30 May 2002

5 of 12

9397 750 09631

8.

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 250 µA; VGS = 0 V

20

--V

VGS(th)

gate-source threshold voltage

ID = 1 mA; VDS =VGS; Figure 9

Tj =25 °C

0.4

0.7

-

V

Tj = 150 °C

0.15

-

V

IDSS

drain-source leakage current

VDS =20V; VGS =0V

Tj =25 °C

-

0.05

1

µA

Tj = 150 °C

-

0.5

mA

IGSS

gate-source leakage current

VGS = ±8 V; VDS = 0 V

-

10

100

nA

RDSon

drain-source on-state resistance

VGS = 4.5 V; ID =5A; Figure 7 and 8

-

4.2

5

m

Ω

VGS = 2.5 V; ID =5A; Figure 7 and 8

-

4.8

5.7

m

Ω

VGS = 1.8 V; ID =5A; Figure 8

-

5.7

8.2

m

Ω

Dynamic characteristics

gfs

forward transconductance

VDS =15V; ID =10A

-

25

-

S

Qg(tot)

total gate charge

ID = 30 A; VDD =10V; VGS = 2.5 V; Figure 13

-32

-

nC

Qgs

gate-source charge

-

10

-

nC

Qgd

gate-drain (Miller) charge

-

13.2

-

nC

Ciss

input capacitance

VGS =0V; VDS = 20 V; f = 1 MHz; Figure 11

-4350 -pF

Coss

output capacitance

-

825

-

pF

Crss

reverse transfer capacitance

-

550

-

pF

td(on)

turn-on delay time

VDD =10V; RL =10 Ω; VGS = 4.5 V; RG =6 Ω

-65

-

ns

tr

rise time

-32

-

ns

td(off)

turn-off delay time

-

190

-

ns

tf

fall time

-90

-

ns

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 3 A; VGS =0V; Figure 12

-

0.75

1.3

V

trr

reverse recovery time

IS = 10 A; dIS/dt = −70 A/µs; VGS = 0 V

-

47

-

ns

Qr

recovery charge

-

17

-

nC

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