Part Name
         Description
RN4905

 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( 5 Page)


TOSHIBA
100% 
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RN4905
2001-06-07
3
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 50V, IE = 0
100
Collector cut-off current
ICEO
VCE = 50V, IB = 0
500
nA
Emitter cut-off current
IEBO
VEB = 5V, IC = 0
0.078
0.145
mA
DC current gain
hFE
VCE = 5V, IC = 10mA
80
Collector-emitter saturation voltage
VCE (sat)
IC = 5mA, IB = 0.25mA
0.1
0.3
V
Input voltage (ON)
VI (ON)
VCE = 0.2V, IC = 5mA
0.6
1.1
V
Input voltage (OFF)
VI (OFF)
VCE = 5V, IC = 0.1mA
0.5
0.8
V
Transition frequency
fT
VCE = 10V, IC = 5mA
250
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1 MHz
3
6
pF
Q1, Q2 Common Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
1.54
2.2
2.86
kΩ
Resistor ratio
R1/R2
0.0421 0.0468 0.0515
1  2  3  4  5 



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