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NTE2936 Datasheet(PDF) 2 Page - NTE Electronics |
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NTE2936 Datasheet(HTML) 2 Page - NTE Electronics |
2 / 3 page Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain–Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 500 – – V Breakdown Voltage Temperature Coefficient ∆V(BR)DSS/ ∆TJ ID = 250µA – 0.68 – V/ °C Gate Threshold Voltage VGS(th) VDS = 5V, ID = 250µA 2.0 – 4.0 V Gate–Source Leakage Forward IGSS VGS = 30V – – 100 nA Gate–Source Leakage Reverse IGSS VGS = –30V – – –100 nA Drain–to–Source Leakage Current IDSS VDS = 500V – – 10 µA VDS = 400V, TC = +125°C – – 100 µA Static Drain–Source ON Resistance RDS(on) VGS = 10V, ID = 4.8A, Note 4 – – 0.4 Ω Forward Transconductance gfs VDS = 50V, ID = 4.8A, Note 4 – 8.96 – mhos Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz – 2500 3250 pF Output Capacitance Coss – 295 340 pF Reverse Transfer Capacitance Crss – 130 150 pF Turn–On Delay Time td(on) VDD = 250V, ID = 14A, RG = 6.2Ω, – 23 55 ns Rise Time tr Note 4, Note 5 – 26 60 ns Turn–Off Delay Time td(off) – 125 260 ns Fall Time tf – 37 85 ns Total Gate Charge Qg VGS = 10V, ID = 14A, VDS = 400V, – 121 157 nC Gate–Source Charge Qgs Note 4, Note 5 – 16.2 – nC Gate–Drain (“Miller”) Charge Qgd – 61 – nC Source–Drain Diode Ratings and Characteristics Continuous Source Current IS (Body Diode) – – 9.6 A Pulse Source Current ISM (Body Diode) Note 1 – – 56 A Diode Forward Voltage VSD TJ = +25°C, IS = 9.6A, VGS = 0V, Note 4 – – 1.4 V Reverse Recovery Time trr TJ = +25°C, IF = 14A, diF/dt = 100A/µs, – 437 – ns Reverse Recovery Charge Qrr Note 4 – 5.5 – µC Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width = 250 µs, Duty Cycle ≤ 2%. Note 5. Essentially independent of operating temperature. |
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