Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain–Source Breakdown Voltage

500

–

–

V

Breakdown Voltage Temperature

Coefficient

–

0.68

–

V/

°C

Gate Threshold Voltage

2.0

–

4.0

V

Gate–Source Leakage Forward

–

–

100

nA

Gate–Source Leakage Reverse

–

–

–100

nA

Drain–to–Source Leakage Current

–

–

10

µA

–

–

100

µA

Static Drain–Source ON Resistance

–

–

0.4

Ω

Forward Transconductance

–

8.96

–

mhos

Input Capacitance

–

2500

3250

pF

Output Capacitance

–

295

340

pF

Reverse Transfer Capacitance

–

130

150

pF

Turn–On Delay Time

–

23

55

ns

Rise Time

Note 4, Note 5

–

26

60

ns

Turn–Off Delay Time

–

125

260

ns

Fall Time

–

37

85

ns

Total Gate Charge

–

121

157

nC

Gate–Source Charge

Note 4, Note 5

–

16.2

–

nC

Gate–Drain (“Miller”) Charge

–

61

–

nC

Source–Drain Diode Ratings and Characteristics

Continuous Source Current

(Body Diode)

–

–

9.6

A

Pulse Source Current

(Body Diode) Note 1

–

–

56

A

Diode Forward Voltage

–

–

1.4

V

Reverse Recovery Time

–

437

–

ns

Reverse Recovery Charge

Note 4

–

5.5

–

µC

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.

Note 4. Pulse Test: Pulse Width = 250

µs, Duty Cycle ≤ 2%.

Note 5. Essentially independent of operating temperature.