512K x 8 MoBL Static RAM
CY62148CV25/30/33
MoBL™
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
Document #: 38-05035 Rev. *A
Revised September 7, 2001
Features
• High Speed
— 55 ns and 70 ns availability
• Low voltage range:
— CY62148CV25: 2.2V–2.7V
— CY62148CV30: 2.7V–3.3V
— CY62148CV33: 3.0V–3.6V
• Pin compatible with CY62148V
• Ultra low active power
— Typical active current: 1.5 mA @ f = 1MHz
— Typical active current: 5.5 mA @ f = fmax (70 ns speed)
• Low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
Functional Description
The CY62148CV25/30/33 are high-performance CMOS static
RAMs organized as 512K words by 8 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL™) in por-
table applications such as cellular telephones. The device also
has an automatic power-down feature that significantly reduc-
es power consumption by 80% when addresses are not tog-
gling. The device can be put into standby mode when dese-
lected (CE HIGH).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O0 through I/O7) is then written into the location speci-
fied on the address pins (A0 through A18).
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW and WE LOW).
The CY62148CV25/30/33 are available in a 36-ball FBGA
package.
Logic Block Diagram
A1
A2
A3
A4
A5
A6
A7
A8
COLUMN
DECODER
Data in Drivers
POWER
DOWN
WE
OE
I/O0
I/O1
I/O2
I/O3
512K x 8
ARRAY
I/O7
I/O6
I/O5
I/O4
A0
CE
A9
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