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FQA62N25C Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQA62N25C Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  Rev. A, March 2004 ©2004 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.96mH, IAS = 62A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 62A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 250 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.28 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 10 µA VDS = 200 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 31 A -- 0.029 0.035 Ω gFS Forward Transconductance VDS = 40 V, ID = 31 A (Note 4) -- 55 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 4830 6280 pF Coss Output Capacitance -- 945 1230 pF Crss Reverse Transfer Capacitance -- 63.5 83 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 125 V, ID = 62 A, RG = 25 Ω (Note 4) -- 75 160 ns tr Turn-On Rise Time -- 395 800 ns td(off) Turn-Off Delay Time -- 245 500 ns tf Turn-Off Fall Time -- 335 680 ns Qg Total Gate Charge VDS = 200 V, ID = 62 A, VGS = 10 V (Note 4) -- 100 130 nC Qgs Gate-Source Charge -- 25.5 -- nC Qgd Gate-Drain Charge -- 39 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 62 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 248 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 62 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 62 A, dIF / dt = 100 A/µs (Note 4) -- 340 -- ns Qrr Reverse Recovery Charge -- 4.77 -- µC |
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