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SSM6N05FU Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # SSM6N05FU
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM6N05FU Datasheet(HTML) 4 Page - Toshiba Semiconductor

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SSM6N05FU
2002-01-17
4
(Q1, Q2 common)
Drain-Source voltage VDS (V)
IDR – VDS
Drain-Source voltage VDS (V)
C – VDS
Drain current ID (mA)
t – ID
Ambient temperature Ta (°C)
PD* – Ta
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
200
400
600
800
1000
Common Source
VGS = 0
Ta
= 25°C
IDR
G
D
S
1
0.1
0.3
1
3
10
30
3
5
10
30
50
100
Common Source
VGS = 0
f
= 1 MHz
Ta
= 25°C
Ciss
Coss
Crss
10
1
3
10
30
100
300
30
50
100
300
500
1000
Common Source
VDD = 3 V
VGS = 0~2.5 V
Ta
= 25°C
toff
tf
ton
tr
*: Total rating
0
0
20
40
60
80
100
120
140
160
100
200
300
400
Mounted on FR4 board.
(25.4 mm
´ 25.4 mm ´ 1.6 t
Cu Pad: 0.32 mm
2
´ 6)


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