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TC55W800FT Datasheet(PDF) 11 Page - Toshiba Semiconductor |
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TC55W800FT Datasheet(HTML) 11 Page - Toshiba Semiconductor |
11 / 13 page TC55W800FT-55,-70 2001-10-03 11/13 DATA RETENTION CHARACTERISTICS (Ta ==== ----40° to 85°C) SYMBOL PARAMETER MIN TYP MAX UNIT VDH Data Retention Supply Voltage 1.5 ¾ 3.3 V VDH = 3.3 V Ta = -40~85°C ¾ ¾ 10 Ta = -40~40°C ¾ ¾ 1 IDDS2 Standby Current VDH = 3.0 V Ta = -40~85°C ¾ ¾ 5 mA tCDR Chip Deselect to Data Retention Mode Time 0 ¾ ¾ ns tR Recovery Time tRC (See Note) ¾ ¾ ns Note: Read cycle time CONTROLLED DATA RETENTION MODE (See Note 1) CE2 CONTROLLED DATA RETENTION MODE (See Note 3) Note: (1) In CE1 controlled data retention mode, minimum standby current mode is entered when CE2 £ 0.2 V or CE2 ³ VDD - 0.2 V. (2) When CE1 is operating at the VIH level, the operating current is given by IDDS1 during the transition of VDD from 2.3 to 2.2V. (3) In CE2 controlled data retention mode, minimum standby current mode is entered when CE2 £ 0.2 V. CE1 VDD 2.3 V GND VIH DATA RETENTION MODE tR (See Note 2) (See Note 2) tCDR VDD - 0.2 V 1 CE VDD VDD VDD 2.3 V GND VIL DATA RETENTION MODE tR tCDR 0.2 V VIH CE2 VDD |
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