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HSCH5531 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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HSCH5531 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VBR IR = 10 µA 4.0 V VF IF = 1.0 mA 375 mV ∆∆∆∆V F IF = 1.0 mA 10 mV IR VR = 1.0 V 100 nA RD IF = 5.0 mA 20 Ω Ω Ω Ω ∆∆∆∆R D IF = 5.0 mA 3.0 Ω Ω Ω Ω CT VR = 0 V f = 1.0 MHz 0.10 pF ∆∆∆∆C T VR = 0 V f = 1.0 MHz 0.02 pF TSS γγγγ RV Zero Bias, Zero Bias, f = 10 GHz PIN = -30 dBm RL = 10 M Ω Video Badwidth = 2.0 MHz -46 17 1.4 dBm mV/µW M Ω Ω Ω Ω BEAM LEAD SCHOTTKY DIODE HSCH5531 DESCRIPTION: The ASI HSCH5531 is a Low Barrier Beam Lead Schottky Diode Designed for K-Band Mixer Applications. MAXIMUM RATINGS IF 25 mA VR 4.0 V PDISS 150 mW @ TA = 25 °C TJ -65 °C to +175 °C TSTG -65 °C to +200 °C PACKAGE STYLE 711 |
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