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IXTP01N100D Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXTP01N100D
Description  High Voltage MOSFET
Download  2 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP01N100D Datasheet(HTML) 1 Page - IXYS Corporation

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Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
1000
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MΩ
1000
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C
= 25
°C;T
J = 25°C to 150°C
100
mA
I
DM
T
C
= 25
°C, pulse width limited by T
J
400
mA
P
D
T
C
= 25
°C25
W
T
A
= 25
°C
1.1
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.063 in.) from case for 10 s
300
°C
Weight
1
g
High Voltage MOSFET
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= -10 V, I
D = 25 µA
1000
V
V
GS(off)
V
DS
= 25V, I
D = 25 µA
-2.5
-5
V
I
GSS
V
GS
=
±20 V
DC, VDS = 0
±100
nA
I
DSS(off)
V
DS
= V
DSS, VGS = -10 V
T
J = 25°C10
µA
T
J = 125°C
250
µA
R
DS(on)
V
GS
=
0 V, I
D = 50 mA Note 1
90
110
Ω
I
D(on)
V
GS
= 0 V, V
DS = 50V Note 1
250
mA
98809A (12/01)
G D
S
TO-220AB (IXTP)
© 2001 IXYS All rights reserved
N-Channel, Depletion Mode
IXTP 01N100D
V
DSS
= 1000
V
I
D25
= 100 mA
R
DS(on) =
110
Ω
Ω
Ω
Ω
Ω
Features
l Normally ON mode
l Low R
DS (on) HDMOS
TM process
l Ruggedpolysilicongatecellstructure
l Fast switching speed
Applications
l Levelshifting
l Triggers
l Solid state relays
l Currentregulators


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