Feb.1999

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR30GM

MEDIUM POWER USE

INSULATED TYPE, GLASS PASSIVATION TYPE

V2. Measurement using the gate trigger characteristics measurement circuit.

V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.

°C/W.

Symbol

Parameter

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

V2

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltage

Test conditions

Unit

mA

V

V

V

V

mA

mA

mA

V

°C/W

V/

µs

Typ.

—

—

—

—

—

—

—

—

—

—

—

!

@

#

!

@

#

ELECTRICAL CHARACTERISTICS

Test conditions

Voltage

class

8

12

(V)

400

600

Min.

—

20

—

20

Commutating voltage and current waveforms

(inductive load)

Symbol

R

L

R

L

Unit

V/

µs

1. Junction temperature

°C

2. Rate of decay of on-state commutat-

ing current

3. Peak off-state voltage

Limits

Min.

—

—

—

—

—

—

—

—

0.2

—

V3

Max.

3.0

1.6

2.5

2.5

2.5

50

50

50

—

1.6

—

SUPPLY

VOLTAGE

TIME

TIME

TIME

MAIN CURRENT

MAIN

VOLTAGE

(di/dt)c

(dv/dt)c

23

200

100

23

44

300

400

500

0

4.4

2.4

0.8

0.4

1.2 1.6 2.0

2.8 3.2 3.6 4.0

7

5

3

2

7

5

3

2

7

5

3

2

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

PERFORMANCE CURVES