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MCM6206BA Datasheet(PDF) 2 Page - Motorola, Inc |
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MCM6206BA Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 8 page MCM6206BA 2 MOTOROLA FAST SRAM TRUTH TABLE (X = Don’t Care) E G W Mode VCC Current Output Cycle H X X Not Selected ISB1, ISB2 High–Z – L H H Output Disabled ICCA High–Z – L L H Read ICCA Dout Read Cycle L X L Write ICCA High–Z Write Cycle ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Power Supply Voltage VCC – 0.5 to + 7.0 V Voltage Relative to VSS For Any Pin Except VCC Vin, Vout – 0.5 to VCC + 0.5 V Output Current Iout ± 20 mA Power Dissipation PD 1.0 W Temperature Under Bias Tbias – 10 to + 85 °C Operating Temperature TA 0 to + 70 °C Storage Temperature—Plastic Tstg – 55 to + 125 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPER- ATING CONDITIONS. Exposure to higher than recommended voltages for ex- tended periods of time could affect device reliability. DC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ±10%, TA = 0 to 70°C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit Supply Voltage (Operating Voltage Range) VCC 4.5 5.0 5.5 V Input High Voltage VIH 2.2 — VCC + 0.3** V Input Low Voltage VIL – 0.5 * — 0.8 V *VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns) ** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 20 ns) DC CHARACTERISTICS Parameter Symbol Min Max Unit Input Leakage Current (All Inputs, Vin = 0 to VCC) Ilkg(I) — ± 1 µA Output Leakage Current (E = VIH or G = VIH, Vout = 0 to VCC) Ilkg(O) — ± 1 µA Output High Voltage (IOH = – 4.0 mA) VOH 2.4 — V Output Low Voltage (IOL = 8.0 mA) VOL — 0.4 V POWER SUPPLY CURRENTS Parameter Symbol –12 –15 –20 –25 Unit AC Active Supply Current (Iout = 0 mA, VCC = Max, f = fmax) ICCA 140 135 130 125 mA AC Standby Current (E = VIH, VCC = Max, f = fmax) ISB1 40 35 35 30 mA CMOS Standby Current (VCC = Max, f = 0 MHz, E ≥ VCC – 0.2 V Vin ≤ VSS + 0.2 V, or ≥ VCC – 0.2 V) ISB2 10 10 10 10 mA CAPACITANCE (f = 1 MHz, dV = 3 V, TA = 25°C, Periodically sampled rather than 100% tested) Characteristic Symbol Max Unit Address Input Capacitance Cin 6 pF Control Pin Input Capacitance (E, G, W) Cin 8 pF I/O Capacitance CI/O 8 pF This device contains circuitry to protect the inputs against damage due to high static volt- ages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maxi- mum rated voltages to this high–impedance circuit. This CMOS memory circuit has been de- signed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained. |
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