NTE3029A

Infrared–Emitting Diode

Description:

The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications.

This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long

lifetime.

Features:

D Low Cost

D Low Degradation

D New Mold Technology Improves Performance under Variable Environmental Conditions

D New Lens Design offers Improved Optical Performance

Applications:

D Low Bit Rate Communication Systems

D Keyboards

D Coin Handlers

D Paper Handlers

D Touch Screens

D Shaft Encoders

D General Purpose Interruptive and Reflective

Event Sensors

Absolute Maximum Ratings:

6V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous

100mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Pulse

1A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 55

°C

2mW/

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40

° to +100°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40

° to +100°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+260

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. The NTE3029A is a discontinued device and has been replaced by NTE3029B.

Note 2 Measured with device soldered into a typical printed circuit board.

Note 3 Maximum exposure time: 5sec. Minimum of 1/16 inch from the case. A heat sink should

be applied in order to prevent the case temperature from exceeding +100

°C.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Reverse Leakage Current

–

0.05

100

µA

Forward Voltage

–

1.3

1.5

V

Temperature Coefficient of Forward Voltage

–

–1.6

–

mV/

°C

Capacitance

C

V = 0V, f = 1MHz

–

24

50

pF