FDS6676S Rev F1 (W)

SyncFET Schottky Body Diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in

parallel with PowerTrench MOSFET. This diode exhibits

similar characteristics to a discrete external Schottky

diode in parallel with a MOSFET. Figure 12 shows the

reverse recovery characteristic of the FDS6676S.

Figure 12. FDS6676S SyncFET body diode

reverse recovery characteristic.

For comparison purposes, Figure 13 shows the reverse

recovery characteristics of the body diode of an

equivalent size MOSFET produced without SyncFET

(FDS6676).

Figure 13. Non-SyncFET (FDS6676) body

diode reverse recovery characteristic.

Schottky barrier diodes exhibit significant leakage at high

temperature and high reverse voltage. This will increase

the power in the device.

0.00001

0.0001

0.001

0.01

0.1

0

5

10

15

20

25

30

T

T

T

Figure 14. SyncFET body diode reverse

leakage versus drain-source voltage and

temperature.

TIME : 12.5ns/div

typ t

typ I

TIME : 12.5ns/div

typ t

typ I