Absolute Maximum Ratings

Parameter

Units

ID @ VGS = -10V, TC = 25°C

Continuous Drain Current

-18

ID @ VGS = -10V, TC = 100°C Continuous Drain Current

-11

IDM

Pulsed Drain Current ➀

-72

PD @ TC = 25°C

Max. Power Dissipation

125

W

Linear Derating Factor

1.0

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

500

mJ

IAR

Avalanche Current ➀

-18

A

EAR

Repetitive Avalanche Energy ➀

12.5

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

-5.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 (for 5 S)

Weight

2.6(typical)

g

PD - 91553F

A

09/22/03

www.irf.com

1

SMD-1

Product Summary

Part Number

IRFN9140

0.20

Ω -18A

For footnotes refer to the last page

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state resis-

tance combined with high transconductance.

sistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

Features:

POWER MOSFET

SURFACE MOUNT(SMD-1)

IRFN9140

JANTX2N7236U

JANTXV2N7236U

JANS2N7236U

REF:MIL-PRF-19500/595

100V, P-CHANNEL

HEXFET

®

MOSFETTECHNOLOGY