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IDT71V65703S75BQ Datasheet(PDF) 6 Page - Integrated Device Technology |
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IDT71V65703S75BQ Datasheet(HTML) 6 Page - Integrated Device Technology |
6 / 26 page 6.42 6 IDT71V65703, IDT71V65903, 256K x 36, 512K x 18, 3.3V Synchronous ZBT™ SRAMs with 3.3V I/O, Burst Counter, and Flow-Through Outputs Commercial and Industrial Temperature Ranges Absolute Maximum Ratings(1) 100 TQFP Capacitance(1) (TA = +25°°°°°C, f = 1.0MHz) Pin Configuration 512K x 18 NOTES: 1. Pins 14 and 66 do not have to be connected directly to VSS as long as the input voltage is < VIL. 2. Pin 16 does not have to be connected directly to VDD as long as the input voltage is > VIH. 3. Pin 84 is reserved for a future 16M. 4. DNU = Do not use. Pins 38, 39, 42 and 43 are reserved for respective JTAG pins: TMS, TDI, TDO and TCK. The current die revision allows these pins to be left unconnected, tied LOW (VSS), or tied HIGH (VDD). Top View 100 TQFP NOTE: 1. This parameter is guaranteed by device characterization, but not production tested. NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VDD terminals only. 3. VDDQ terminals only. 4. Input terminals only. 5. I/O terminals only. 6. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any input or I/O pin cannot exceed VDDQ during power supply ramp up. 7. TA is the “instant on” case temperature. Symbol Rating Commercial & Industrial Unit VTERM(2) Terminal Voltage with Respect to GND -0.5 to +4.6 V VTERM(3,6) Terminal Voltage with Respect to GND -0.5 to VDD V VTERM(4,6) Terminal Voltage with Respect to GND -0.5 to VDD +0.5 V VTERM(5,6) Terminal Voltage with Respect to GND -0.5 to VDDQ +0.5 V TA(7) Commercial 0 to +70 oC Industrial -40 to +85 oC TBIAS Temperature Under Bias -55 to +125 oC TSTG Storage Temperature -55 to +125 oC PT Power Dissipation 2.0 W IOUT DC Output Current 50 mA 5298 tbl 06 Symbol Parameter(1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV 5 pF CI/O I/O Capacitance VOUT = 3dV 7 pF 5298 tbl 07 100 99 98 97 96 95 94 93 92 91 90 87 86 85 84 83 82 81 89 88 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 NC NC VDDQ VSS NC I/OP2 I/O15 I/O14 VSS VDDQ I/O13 I/O12 VSS VDD I/O11 I/O10 VDDQ VSS I/O9 I/O8 NC NC VSS VDDQ NC NC 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 NC VDDQ VSS NC I/OP1 I/O7 I/O6 VSS VDDQ I/O5 I/O4 VSS VDD I/O3 I/O2 VDDQ VSS I/O1 I/O0 NC NC VSS VDDQ NC NC 5298 drw 02a VSS(1) NC NC VDD(2) NC NC VSS(1) A10 ZZ , Symbol Parameter(1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV 7 pF CI/O I/O Capacitance VOUT = 3dV 7 pF 5298 tbl 07a 165 fBGA Capacitance(1) (TA = +25°°°°°C, f = 1.0MHz) 119 BGA Capacitance(1) (TA = +25°°°°°C, f = 1.0MHz) Symbol Parameter(1) Conditions Max. Unit CIN Input Capacitance VIN = 3dV TBD pF CI/O I/O Capacitance VOUT = 3dV TBD pF 5298 tbl 07b |
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