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BS62UV1027STIG10 Datasheet(PDF) 3 Page - Brilliance Semiconductor |
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BS62UV1027STIG10 Datasheet(HTML) 3 Page - Brilliance Semiconductor |
3 / 10 page Revision 2.1 Jan. 2004 3 R0201-BS62UV1027 BSI BS62UV1027 PARAMETER NAME PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS Vcc=2.0V 0.6 VIL Guaranteed Input Low Voltage (2) Vcc=3.0V -0.3 (5) -- 0.8 V Vcc=2.0V 1.4 VIH Guaranteed Input High Voltage (2) Vcc=3.0V 2.0 -- Vcc+0.3 V IIL Input Leakage Current Vcc = Max, VIN = 0V to Vcc -- -- 1 uA ILO Output Leakage Current Vcc = Max, CE1= VIH, CE2= VIL, or OE = VIH, VI/O = 0V to Vcc -- -- 1 uA Vcc = Max, IOL = 0.1mA Vcc=2.0V 0.2 VOL Output Low Voltage Vcc = Max, IOL = 2.0mA Vcc=3.0V -- -- 0.4 V Vcc = Min, IOH = -0.1mA Vcc=2.0V Vcc-0.2 VOH Output High Voltage Vcc = Min, IOH = -1.0mA Vcc=3.0V 2.4 -- -- V Vcc=2.0V -- -- 8 ICC Operating Power Supply Current CE1 = VIL, CE2 = VIH, IDQ = 0mA, F = Fmax (3) Vcc=3.0V -- -- 15 mA Vcc=2.0V -- -- 0.1 ICCSB Standby Current-TTL CE1 = VIH, or CE2 = VIL, IDQ = 0mA Vcc=3.0V -- -- 0.5 mA Vcc=2.0V -- 0.05 1.0 ICCSB1 (4) Standby Current-CMOS CE1≧Vcc-0.2V or CE2≦0.2V, VIN≧Vcc-0.2V or VIN≦0.2V Vcc=3.0V -- 0.10 2.5 uA 1. Typical characteristics are at TA = 25oC. 2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 3. Fmax = 1/t RC . 4. IccSB1(Max.) is 0.5uA/1.3uA at Vcc=2.0V/3.0V and TA=70oC. 5. VIL = -1.5V for pulse width less than 30ns DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC ) 1. Vcc = 1.2V, TA = + 25OC 2. t RC = Read Cycle Time 3. IccDR(Max.) is 0.2uA at TA=70OC. DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC ) LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled ) CE1 Data Retention Mode Vcc t CDR Vcc t R VIH VIH Vcc VDR 1.2V ≥ CE1 Vcc - 0.2V ≥ LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled ) SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. (1) MAX. UNITS VDR Vcc for Data Retention CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V, VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V 1.2 -- -- V ICCDR (3) Data Retention Current CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V, VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V -- 0.03 0.3 uA tCDR Chip Deselect to Data Retention Time 0 -- -- ns tR Operation Recovery Time See Retention Waveform TRC (2) -- -- ns CE2 Data Retention Mode Vcc t CDR Vcc t R VIL VIL Vcc VDR ≧ 1.2V CE2 ≦ 0.2V |
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