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2N3762 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # 2N3762
Description  PNP SWITCHING SILICON TRANSISTOR
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3762 Datasheet(HTML) 1 Page - Microsemi Corporation

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TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/396
Devices
Qualified Level
2N3762
2N3762L
2N3763
2N3763L
2N3764
2N3765
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N3762*
2N3764
2N3763*
2N3765
Unit
Collector-Emitter Voltage
VCEO
40
60
Vdc
Collector-Base Voltage
VCBO
40
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
1.5
Adc
2N3762*
1
2N3763*
2N3764
2
2N3765
Total Power Dissipation
@ TA = +25
0C
PT
1.0
0.5
W
Operating & Storage Junction Temp. Range
Top, Tstg
-55 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
2N3762*
2N3763*
2N3764
2N3765
Thermal Resistance Junction-to-Case
RθJC
60
88
0C/W
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly at 5.71 mW/
0C for TA > +250C
2) Derate linearly at 2.86 mW/
0C for TA > +250C
TO-39* (TO-205AD)
2N3762, 2N3763
TO-5*
2N3762L, 2N3763L
TO-46* (TO-206AB)
2N3764, 2N3765
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
2N3762, 2N3764
2N3763, 2N3765
V(BR)CEO
40
60
Vdc
Collector-Base Cutoff Current
VCB = 20 Vdc
2N3762, 2N3764
VCB = 30 Vdc
2N3763, 2N3765
VCB = 40 Vdc
2N3762, 2N3764
VCB = 60 Vdc
2N3763, 2N3765
ICBO
100
100
10
10
ηAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


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