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2N3763L Datasheet(PDF) 2 Page - Microsemi Corporation |
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2N3763L Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 2 page 2N3762, L, 2N3763, L, 2N3764, 2N3765 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit Collector-Emitter Cutoff Current VEB = 2.0 Vdc, VCE = 20 Vdc 2N3762, 2N3764 VEB = 2.0 Vdc, VCE = 30 Vdc 2N3763, 2N3765 ICEX 100 100 ηAdc Emitter-Base Cutoff Current VEB = 2.0 Vdc All Types VEB = 5.0 Vdc 2N3762, 2N3764 2N3763, 2N3765 IEBO 200 10 10 ηAdc µAdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 10 mAdc, VCE = 1.0 Vdc IC = 150 mAdc, VCE = 1.0 Vdc IC = 500 mAdc, VCE = 1.0 Vdc IC = 1.0 Adc, VCE = 1.5 Vdc 2N3762, 2N3764 2N3763, 2N3765 IC = 1.5 Adc, VCE = 5.0 Vdc 2N3762, 2N3764 2N3763, 2N3765 hFE 35 40 40 30 20 30 20 140 120 80 Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 150 m Adc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc VCE(sat) 0.1 0.22 0.5 0.9 Vdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 150 m Adc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.0 Adc, IB = 100 mAdc VBE(sat) 0.9 0.8 1.0 1.2 1.4 Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz 2N3762, 2N3764 2N3763, 2N3765 h fe 1.8 1.5 6.0 6.0 Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 25 pF Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 80 pF SWITCHING CHARACTERISTICS Delay Time VCC = 30 Vdc, VEB = 0, td 8.0 ηs Rise Time IC = 1.0 mAdc, IB1 = 100 mAdc tr 35 ηs Storage Time VCC = 30 Vdc, VEB = 0, ts 80 ηs Fall Time IC = 1.0 mAdc, IB1 = 100 mAdc tf 35 ηs (3) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 |
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