MWI50-06A7 datasheet(4/4 Pages) IXYS

Part #	MWI50-06A7

Description	IGBT Modules

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Manufacturer	IXYS [IXYS Corporation]

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MWI 50-06 A7

MWI 50-06 A7T

Fig. 7

Typ. turn on energy and switching

Fig. 8 Typ. turn off energy and switching

times versus collector current

Fig. 9

Typ. turn on energy and switching

Fig.10 Typ. turn off energy and switching

times versus gate resistor

Fig. 11 Reverse biased safe operating area

Fig. 12 Typ. transient thermal impedance

RBSOA

040

80

120

0.0

2.5

5.0

7.5

10.0

0

25

50

75

100

0

40

80

120

0

1

2

3

4

0

100

200

300

400

0.00001 0.0001 0.001

0.01

0.1

1

10

0.0001

0.001

0.01

0.1

1

10

0

102030

405060

0

1

2

3

0

200

400

600

0

10

20304050

60

1

2

3

4

20

40

60

80

single pulse

V

CE = 300V

V

GE = ±15V

R

G = 22W

T

VJ = 125°C

MWI5006A7

V

CE = 300V

V

GE = ±15V

I

C

= 50A

T

VJ = 125°C

0

100

200

300

400

500

600

700

0

30

60

90

120

R

G = 22 W

T

VJ = 125°C

V

CE = 300V

V

GE = ±15V

R

G = 22W

T

VJ = 125°C

E

on

V

CE = 300V

V

GE = ±15V

I

C

= 50A

T

VJ = 125°C

t

d(on)

t

r

E

off

t

d(off)

t

f

E

on

t

d(on)

t

r

E

off

t

d(off)

t

f

I

C

A

I

C

A

E

off

E

on

t

R

G

W

R

G

W

V

CE

t

s

mJ

E

on

mJ

E

off

ns

t

ns

t

I

CM

K/W

Z

thJC

IGBT

diode

V

A

mJ

ns

mJ

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