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WED9LC6416V2010BI Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers |
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3 / 27 page 3 White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com WED9LC6416V January 20001 OUTPUT FUNCTIONAL DESCRIPTIONS Symbol Type Signal Polarity Function SSCLK Input Pulse Positive Edge The system clock input. All of the SSRAM inputs are sampled on the rising edge of the clock. SSADS When sampled at the positive rising edge of the clock, SSADS, SSOE, and SSWE define the operation SSOE Input Pulse Active Low to be executed by the SSRAM. SSWE SSCE Input Pulse Active Low SSCE disable or enable SSRAM device operation. SDCLK Input Pulse Positive Edge The system clock input. All of the SDRAM inputs are sampled on the rising edge of the clock. SDCE Input Pulse Active Low SDCE disable or enable device operation by masking or enabling all inputs except SDCLK and BWE0-3. SDRAS When sampled at the positive rising edge of the clock, SDCAS, SDRAS, and SDWE define the operation SDCAS Input Pulse Active Low to be executed by the SDRAM. SDWE Address bus for SSRAM and SDRAM A0 and A1 are the burst address inputs for the SSRAM During a Bank Active command cycle, A0-11, SDA10 defines the row address (RA0-10) when sampled at the rising clock edge. A0-16, Input Level — During a Read or Write command cycle, A0-7 defines the column address (CA0-7) when sampled at the SDA10 rising clock edge. In addition to the row address, SDA10 is used to invoke Autoprecharge operation at the end of the Burst Read or Write Cycle. If SDA10 is high, autoprecharge is selected and A12 and A13 define the bank to be precharged. If SDA10 is low, autoprecharge is disabled. During a Precharge command cycle, SDA10 is used in conjunction with A12 and A13 to control which bank(s) to precharge. If SDA10 is high, all banks will be precharged regardless of the state of A12 and A13. If SDA10 is low, then A12 and A13 are used to define which bank to precharge. DQ0-31 Input Level — Data Input/Output are multiplexed on the same pins. Output BWE0-3 Input Pulse BWE0-3 perform the byte write enable function for the SSRAM and DQM function for the SDRAM. BWE0 is associated with DQ0-7, BWE1 with DQ8-15, BWE2 with DQ16-23 and BWE3 with DQ24-31. Vcc, Vss Supply Power and ground for the input buffers and the core logic. VCCQ Supply Data base power supply pins, 3.3V (2.5V future). |
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